Narrow-gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to that of silicon, i.e. smaller than 1.11 eV at room temperature. They are used as infrared detectors or thermoelectrics.
List of narrow-gap semiconductors
| Name | Chemical formula | Groups | Band gap (300 K) |
|---|---|---|---|
| Mercury cadmium telluride | Hg1-xCdxTe | II-VI | 0 to 1.5 eV |
| Mercury zinc telluride | Hg1-xZnxTe | II-VI | -0.15 to 2.25 eV |
| Lead selenide | PbSe | IV-VI | 0.27 eV |
| Lead(II) sulfide | PbS | IV-VI | 0.37 eV |
| Lead telluride | PbTe | IV-VI | 0.32 eV |
| Indium arsenide | InAs | III-V | 0.354 eV |
| Indium antimonide | InSb | III-V | 0.17 eV |
| Gallium antimonide | GaSb | III-V | 0.67 eV |
| Cadmium arsenide | Cd3As2 | II-V | 0.5 to 0.6 eV |
| Bismuth telluride | Bi2Te3 | 0.21 eV | |
| Tin telluride | SnTe | IV-VI | 0.18 eV |
| Tin selenide | SnSe | IV-VI | 0.9 eV |
| Silver(I) selenide | Ag2Se | 0.07 eV | |
| Magnesium silicide | Mg2Si | II-IV | 0.73 eV[1] |
See also
List of semiconductor materials
Wide-bandgap semiconductor
References
Nelson, J. T. Electrical and optical properties of MgPSn and MggSi. Am. J. Phys. 23: 390. 1955.
Dornhaus, R., Nimtz, G., Schlicht, B. (1983). Narrow-Gap Semiconductors. Springer Tracts in Modern Physics 98, ISBN 978-3-540-12091-9 (print) ISBN 978-3-540-39531-7 (online)
Nimtz, G. (1980), Recombination in Narrow-Gap Semiconductors, Physics Reports, 63, 265-300
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