Gas immersion laser doping (GILD) is a method of doping a semiconductor material such as silicon.
In the case of doping silicon with boron to create a P-type semiconductor material, a thin wafer of silicon is placed in a containment chamber and is immersed in boron gas. A pulsed laser is directed at the silicon wafer and this results in localised melting and subsequent recrystalisation of the silicon wafer material, allowing boron atoms in the gas to diffuse into the molten sections of the silicon wafer.[1] The end result of this process is a silicon wafer with boron impurities, creating a P-type semiconductor.
References
"Gas immersion laser doping (GILD) for ultra-shallow junction formation". doi:10.1016/j.tsf.2003.11.151.
Further reading
https://web.archive.org/web/20061125030611/http://physicsweb.org/articles/news/10/11/19/1%7B%7Bfull citation needed|date=October 2017}}
Carey, P.G; Sigmon, T.W (1989). "In-situ doping of silicon using the gas immersion laser doping (GILD) process". Applied Surface Science. 43 (1–4): 325–32. Bibcode:1989ApSS...43..325C. doi:10.1016/0169-4332(89)90234-1.
Weiner, K.H; Sigmon, T.W (1989). "Thin-base bipolar transistor fabrication using gas immersion laser doping". IEEE Electron Device Letters. 10 (6): 260–3. Bibcode:1989IEDL...10..260W. doi:10.1109/55.31740.
Kerrien, G; Sarnet, T; Débarre, D; Boulmer, J; Hernandez, M; Laviron, C; Semeria, M.-N (2004). "Gas immersion laser doping (GILD) for ultra-shallow junction formation". Thin Solid Films. 453-454: 106–9. Bibcode:2004TSF...453..106K. doi:10.1016/j.tsf.2003.11.151.
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